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多维形状记忆合金耗能阻尼器

2022-10-20 Hits:

First Author:Hongnan Li

Disigner of the Invention:孙彤,Gang Li

Institution:建设工程学部

Application Number:CN203546938U

Authorization Number:CN201320732994.7

Gang Li

Gender:Male Alma Mater:Dalian University of Technology Academic Titles:Vice Dean of Faculty of Infrastructure Engineering Degree:Doctoral Degree School/Department:School of Civil Engineering E-Mail: