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Indexed by:期刊论文

Date of Publication:2013-09-01

Journal:APPLIED SURFACE SCIENCE

Included Journals:SCIE、EI、Scopus

Volume:280

Page Number:909-913

ISSN No.:0169-4332

Key Words:GaN films; Low-temperature; Graphite substrates; ECR-PEMOCVD

Abstract:Highly-quality GaN films were deposited on graphite substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at low temperature. The influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), scanning electron microscope (SEM), and room temperature photoluminescence (PL), respectively. Results indicated that the dense and uniformed GaN films with highly c-axis preferred orientation were successfully achieved on graphite substrates under optimized deposition temperature of 450 degrees C. In addition, the relatively good ohmic contact between GaN and graphite was demonstrated by current-voltage (I-V) characteristics measurement. (C) 2013 Elsevier B.V. All rights reserved.