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论文类型：期刊论文

发表时间：2010-09-19

发表刊物：Advanced Materials Research

收录刊物：EI、CPCI-S、Scopus

卷号：126-128

页面范围：113-118

ISSN号：9780878492428

关键字：Silicon wafer; Grinding; Subsurface damage; Diamond grinding wheel

摘要：Using the cross-section angle polishing microscopy, the subsurface damage of the silicon wafers (100) ground by the diamond wheels with different grain size were investigated, and subsurface damage distributions in different crystal orientations and radial locations of the silicon wafers (100) were analyzed. The experiment results showed that the grain size of diamond wheel has great influence on the subsurface damage depth of the ground wafer. On the ground wafer without spark-out process, the subsurface damage depth increased along the radical direction from the centre to the edge and the subsurface damage depth in < 110 > crystal orientation was larger than that in < 100 > crystal orientation; but on the ground wafer with spark-out process, the subsurface damage depth in different crystal oriental:ions and radial locations become uniform.