点击次数：

论文类型：会议论文

发表时间：2009-10-04

收录刊物：EI、CPCI-S、Scopus

卷号：1

页面范围：721-728

关键字：Machining; Measurement; Nanotopography; Silicon Wafer; Simultaneous Double Side Grinding

摘要：Nanotopograhphy on unpatterned silicon wafers is becoming a serious issue in IC fabrication, especially with the decreasing critical dimension. However, there are no review papers to summarize the literature on nanotopography in silicon wafer manufacturing. This paper reviews the literature on nanotopography in silicon wafer manufacturing. It first describes the significance and definition of nanotopography. It then presents the methods and principles of nanotopography measurement. It also discusses experimental investigations about the effects of simultaneous double side grinding process on nanotopography.