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论文类型：期刊论文

发表时间：2015-04-01

发表刊物：PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY

收录刊物：SCIE、EI

卷号：40

页面范围：87-93

ISSN号：0141-6359

关键字：Silicon wafer; Grinding; Thinning; Warping; Stress

摘要：This study investigates warping of silicon wafers in ultra-precision grinding-based back-thinning process. By analyzing the interactions between the wafer and the vacuum chuck, together with the machining stress distributions in damage layer of ground wafer, the study establishes a mathematical model to describe wafer warping during the thinning process using the elasticity theory. The model correlates wafer warping with machining stresses, wafer final thickness, damage layer thickness, and the mechanical properties of the monocrystalline silicon. The maximum warp and the warp profile are measured on the wafers thinned to various thicknesses under different grinding conditions, and are used to verify the modeling results. (C) 2014 Elsevier Inc. All rights reserved.