A model for nanogrinding based on direct evidence of ground chips of silicon wafers
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论文类型：期刊论文
发表时间：2013-09-01
发表刊物：SCIENCE CHINA-TECHNOLOGICAL SCIENCES
收录刊物：Scopus、EI、SCIE
卷号：56
期号：9
页面范围：2099-2108
ISSN号：1674-7321
关键字：nanometer chip; nanogrinding; surface roughness; si wafer; TEM
摘要：Nanometer chips were directly fabricated using face nanogrinding carried out by ultrafine diamond grits at room temperature. Direct evidence for ground nanometer chips is cuboid, and the average ratio of width to thickness is 1.49. Chips of 9.0 nm in thickness, 13.3 nm in width, and 16.0 in diagonal were achieved and confirmed using transmission electron microscopy. Based on the nanometer chips observed, a model was proposed according to the mass conservation and fundamental mechanism of face grinding. The surface roughness and thickness of damaged layers measured experimentally are in good agreement with the prediction of the developed model. The feed rate significantly affects the surface roughness and thickness of damaged layers, when keeping the wheel and table speeds constant, respectively.