Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits
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论文类型：期刊论文
发表时间：2011-01-01
发表刊物：SCRIPTA MATERIALIA
收录刊物：Scopus、EI、SCIE
卷号：64
期号：2
页面范围：177-180
ISSN号：1359-6462
关键字：Transmission electron microscopy (TEM); Semiconductors; Nanocrystalline microstructure; Plastic deformation; Phase transformations
摘要：Phase transformation of single crystal silicon (Si) was investigated under various grinding conditions using high-resolution transmission electron microscopy. Nanocrystals with sizes ranging from 6 to 20 nm of diamond cubic silicon (Si-I) and high-pressure phase (Si-III) were observed in the grinding-induced amorphous Si layers. The phase transformation pattern was found to be influenced by the thermal status involved in the grinding processes. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.