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论文类型：期刊论文

发表时间：2008-05-30

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：SCIE、EI

卷号：254

期号：15

页面范围：4856-4863

ISSN号：0169-4332

关键字：MgO single crystal; substrate; scratch; chemical mechanical polishing; surface roughness

摘要：Etching and chemical mechanical polishing (CMP) experiments of the MgO single crystal substrate with an artificial scratch on its surface are respectively performed with the developed polishing slurry mainly containing 2 vol.% phosphoric acid (H(3)PO(4)) and 10-20 nm colloidal silica particles, through observing the variations of the scratch topography on the substrate surface in experiments process, the mechanism and effect of removing scratch during etching and polishing are studied, some evaluating indexes for effect of removing scratch are presented. Finally, chemical mechanical polishing experiments of the MgO substrates after lapped are conducted by using different kinds of polishing pads, and influences of the polishing pad hardness on removal of the scratches on the MgO substrate surface are discussed. (C) 2008 Elsevier B.V. All rights reserved.