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论文类型：期刊论文

发表时间：2007-02-01

发表刊物：RARE METALS

收录刊物：SCIE、EI、CSCD

卷号：26

期号：1

页面范围：13-18

ISSN号：1001-0521

关键字：silicon wafers; grinding; subsurface damage; microstructure

摘要：The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyzed. The results show that many microcracks, fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel. No obvious microstructure change exists. The amorphous layer with a thickness of about 100 nm, microcracks, high density dislocations, and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel. For the wafer ground by the #2000 grinding wheel, an amorphous layer of about 30 nm thickness, a polycrystalline silicon layer, a few dislocations, and an elastic deformation layer exist. In general, with the decrease in grit size, the material removal mode changes from micro-fracture mode to ductile mode gradually.