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6-in. high-voltage GaN-based E-mode HEMTs with ultrathin barrier structures: Interface quality and its reliability
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Indexed by:Journal Papers

Document Code:472566

Date of Publication:2025-03-18

Journal:APPLIED PHYSICS LETTERS

Volume:126

Issue:11

ISSN:0003-6951

Key Words:MIS-HEMTS

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Assistant Professor
Supervisor of Master's Candidates

Gender:Female

Alma Mater:湖南大学

Degree:Doctoral Degree

School/Department:光电工程与仪器科学学院

Discipline:Power Electronics and Electrical Drives. Measuring Technology and Instrument

Business Address:厚望楼206

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