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Thin-Barrier E-mode GaN-based MIS-HEMT with High Saturation Current Using AlSiO Composite Gate Dielectric

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Indexed by:Conference Paper

Document Code:477692

Date of Publication:2024-01-01

Journal:Proceedings - 2024 21st China International Forum on Solid State Lighting and 2024 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024

Page Number:259-262

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Assistant Professor
Supervisor of Master's Candidates

Gender:Female

Alma Mater:湖南大学

Degree:Doctoral Degree

School/Department:光电工程与仪器科学学院

Discipline:Power Electronics and Electrical Drives. Measuring Technology and Instrument

Business Address:厚望楼206

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