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Recessed-Gate Enhancement-Mode GaN HEMTs: Pre-Stress-Free High-Voltage Pulse Testing and Its Effects on Dynamic On-Resistance
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Indexed by:Journal Papers

Document Code:602957

Date of Publication:2026-01-01

Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics

ISSN:2168-6777

Key Words:Double-pulse testing; Dynamic on-resistance; Multi-pulse testing; Recessed-gate enhancement-mode GaN HEMT

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Assistant Professor
Supervisor of Master's Candidates

Gender:Female

Alma Mater:湖南大学

Degree:Doctoral Degree

School/Department:光电工程与仪器科学学院

Discipline:Measuring Technology and Instrument. Power Electronics and Electrical Drives

Business Address:厚望楼206

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