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发布时间：2019-03-12
论文类型：期刊论文
发表时间：2017-02-01
发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：Scopus、EI、SCIE
卷号：28
期号：3
页面范围：2598-2601
ISSN号：0957-4522
摘要：GaN network structure was synthesized on a hexagonal epsilon-Ga2O3 film by performing thermal nitridation under ammonia atmosphere in III-nitride MOCVD system. High-resolution X-ray diffraction revealed that the GaN had a (0002) preferred orientation, and no other polymorphs of GaN were detected. X-ray photoelectron spectroscopy results confirmed the formation of Ga-N bonds as well as other element status induced from nitridation process. According to field-emission scanning electron microscopy and atomic force microscopy images, the surface of GaN layer shows network morphology, which was caused by etching from hydrogen gas along GaN grain boundary. Our results indicated the potential applications of nitrided GaN/epsilon-Ga2O3 structure in fabricating novel electronic and optoelectronic devices.