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论文类型：期刊论文
发表时间：2017-02-01
发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：SCIE、EI、Scopus
卷号：28
期号：3
页面范围：2602-2606
ISSN号：0957-4522
摘要：The Sb-doped ZnO films were grown on c-plane sapphire by metal organic chemical vapor deposition technology with various substrate temperatures. We have examined the influence of the substrate temperature on the crystal, electrical and optical properties of the Sb-doped ZnO films. The XRD patterns indicated the undoped ZnO film and the Sb-doped ZnO films showed a strong preferred orientation toward the c-axis. Hall effects measurements revealed the Sb-doped ZnO films exhibited p-type electrical conductivity. Low temperature photoluminescence spectra confirmed the existence of Sb in ZnO films. The photoluminescence spectra of the Sb-doped ZnO films revealed the transition between the free electrons and acceptors peak at 3.243 eV, the acceptor-bound exciton peak at 3.319 eV. The thermal binding energy of the Sb accepter was estimated to be about 0.19 eV.