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发布时间：2019-03-09
论文类型：期刊论文
发表时间：2015-09-16
发表刊物：JOURNAL OF PHYSICS D-APPLIED PHYSICS
收录刊物：Scopus、EI、SCIE
卷号：48
期号：36
ISSN号：0022-3727
关键字：1D ZnO nano-arrays/rods; wet etching; etching time; end shape
摘要：The well-aligned ZnO nano-arrays/rods synthesized by a chemical bath deposition method on a highly conductive Si substrate were chemically etched in an ammonia chloride aqueous solution. An obvious end shape modification of ZnO nano-arrays/rods was realized in this report. The hexagonal frustum end of ZnO nano-arrays/rods changed into a pyramid and the diameter of ZnO nano-arrays/rods decreased gradually with the increasing etching time. The evolution mechanism of the wet etching process was discussed based on a proposed evolution model. Photoluminescence measurements indicated that the near band edge emissions of ZnO nano-arrays/rods increased greatly after wet etching. The controllable end shape modification of ZnO nano-arrays/rods on a highly conductive Si substrate by this simple wet etching technique will further explore the application of ZnO in field emission devices and 1D based nano-devices with various end shapes.