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论文类型：期刊论文
发表时间：2015-09-01
发表刊物：SUPERLATTICES AND MICROSTRUCTURES
收录刊物：SCIE、EI、Scopus
卷号：85
页面范围：482-487
ISSN号：0749-6036
关键字：Silicon carbide; Ultraviolet light-emitting diode; Distributed Bragg reflector; SiNx interlayer
摘要：Near-ultraviolet (UV) InGaN/AlGaN multiple quantum well (MQW) LEDs with 30 pairs AlGaN/GaN distributed Bragg reflectors (DBRs) were grown on 6H-SiC substrate by metal-organic chemical vapor deposition. A thin SiNx interlayer was introduced between the DBRs and n-GaN layer of the LED to reduce the threading dislocation density and result in enhancement the internal quantum efficiency (eta(int)) of the InGaN/AlGaN LED. The result indicates that the light output power for the LED with DBRs and SiNx interlayer was approximately 56% higher (at 350 mA) than the LED without DBRs and SiNx interlayer on 6H-SiC substrate, and this significant improvement in performance is attributed not only to the light extraction enhancement via the DBRs but also due to improve epilayer crystalline quality. (C) 2015 Elsevier Ltd. All rights reserved.