点击次数：
发布时间：2019-03-09
论文类型：期刊论文
发表时间：2014-05-01
发表刊物：JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
收录刊物：EI、SCIE
卷号：32
期号：3
ISSN号：1071-1023
摘要：Thin films of beta-Ga2O3 are prepared on sapphire substrates via electron beam evaporation and annealed at 1000 degrees C for 1 h. The effect of the annealing treatment upon the crystal structures, surface morphologies, and optical properties of beta-Ga2O3 films are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, Fourier transform infrared spectroscopy, and photoluminescence and optical transmittance spectra. The easily prepared beta-Ga2O3 films present a mixed structure of amorphous and crystalline phases. The annealed beta-Ga2O3 films exhibit a clear absorption edge in the deep ultraviolet region. Ultraviolet and red emissions are also observed in the photoluminescence spectra of the annealed beta-Ga2O3 films. (C) 2014 American Vacuum Society.