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论文类型：期刊论文
发表时间：2014-04-01
发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：SCIE、EI
卷号：25
期号：4
页面范围：1955-1958
ISSN号：0957-4522
摘要：The highly arrayed arsenic doped p-ZnO nanowires/n-ZnO thin film homojunction light-emitting diode was fabricated on semi-insulated Si substrate. The homojunction was consisted of high-quality n-ZnO thin film grown by metal-organic chemical vapor deposition technology following arsenic doped ZnO nanowires grown by chemical vapor deposition. The device shows good rectification characteristic with a turn-on voltage of similar to 4.8 V and reverse breakdown voltage of similar to 18 V. Moreover, two distinct electroluminescence bands centered at 2.35 and 3.18 eV are detected from this device under forward bias at room temperature.