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论文类型：期刊论文
发表时间：2014-03-01
发表刊物：JOURNAL OF MATERIALS SCIENCE
收录刊物：SCIE、EI、Scopus
卷号：49
期号：5
页面范围：1994-1999
ISSN号：0022-2461
摘要：ZnO single crystals were implanted with 280 keV C+ to a dose of 6 x 10(16) cm(-2). Positron annihilation measurements reveal a large number of vacancy clusters in the implanted sample. They further agglomerate into larger size or even microvoids after annealing up to 700 A degrees C, and are fully removed at 1200 A degrees C. X-ray diffraction, photoluminescence, and Raman scattering measurements all indicate severe damage introduced by implantation, and the damaged lattice is partially recovered after annealing above 500 A degrees C. From room temperature photoluminescence measurements, an additional peak at around 3.235 eV appears in the implanted sample after annealing at 1100 A degrees C, which is much stronger than that of the free exciton. From the analysis of low temperature photoluminescence spectra, this peak is mostly a free electron to acceptor (e,A(0)) line which is probably associated with C (O) .