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论文类型：期刊论文
发表时间：2014-02-03
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI
卷号：104
期号：5
ISSN号：0003-6951
摘要：Negative differential resistance (NDR) behavior was observed in low Al-composition p-GaN/Mg-doped-Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate. The energy band and free carrier concentration of hetero-junction were studied by the model of the self-consistent solution of Schrodinger-Poisson equations combined with polarization engineering theory. At the forward bias of 0.95 V, the NDR effect has a high peak-to-valley current ratio of similar to 9 with a peak current of 22.4mA (similar to current density of 11.4 A/cm(2)). An interesting phenomenon of NDR disappearance after consecutive scans and recurrence after electrical treatment was observed, which was associated with Poole-Frenkel effect. (C) 2014 AIP Publishing LLC.