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论文类型：期刊论文
发表时间：2014-02-01
发表刊物：CHINESE PHYSICS LETTERS
收录刊物：SCIE、ISTIC、Scopus
卷号：31
期号：2
ISSN号：0256-307X
摘要：Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.