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发布时间：2019-03-09
论文类型：期刊论文
发表时间：2013-09-01
发表刊物：JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
收录刊物：Scopus、ISTIC、EI、SCIE
卷号：29
期号：9
页面范围：830-834
ISSN号：1005-0302
关键字：ZnO thin films; Metal-organic chemical vapor deposition; Conductive atomic force microscopy; Scanning electron microscopy
摘要：ZnO thin films were grown on Si (111) substrates by low-pressure metal-organic chemical vapor deposition. The crystal structures and electrical properties of as-grown sample were investigated by scanning electron microscopy (SEM) and conductive atomic force microscopy (C-AFM). It can be seen that with increasing growth temperature, the surface morphology of ZnO thin films changed from flake-like to cobblestones-like structure. The current maps were simultaneously recorded with the topography, which was gained by C-AFM contact mode. Conductivity for the off-axis facet planes presented on ZnO grains enhanced. Measurement results indicate that the off-axis facet planes were more electrically active than the c-plane of ZnO flakes or particles probably due to lower Schottky barrier height of the off-axis facet planes.