点击次数：
论文类型：期刊论文
发表时间：2013-09-01
发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：SCIE、EI、Scopus
卷号：24
期号：9
页面范围：3299-3302
ISSN号：0957-4522
摘要：GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H-2 in metal organic chemical vapor deposition system. It was found that in situ H-2 treatment brought a porous SiC surface. The influence of H-2 pre-treatment conditions on SiC surface was carefully investigated. Moreover, our experiment demonstrated that the H-2 pre-treatment can distinctly influence the GaN basic characteristics.