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论文类型：期刊论文
发表时间：2013-07-30
发表刊物：CHEMICAL PHYSICS LETTERS
收录刊物：SCIE、EI
卷号：579
页面范围：90-93
ISSN号：0009-2614
摘要：High resistivity ZnO:Cu thin films were fabricated on c-plane sapphire substrate by low pressure metal-organic chemical vapor deposition (MOCVD). The samples were treated in H-2 ambient at high pressure and the thermal stability of the hydrogen-related donor-like defects was studied. Hall-effect measurement results presented that the high resistivity ZnO:Cu samples turn into n-type conductivity after H incorporation. The annealing results indicated that the hydrogenated ZnO:Cu could not recover high resistivity even after annealed at 750 degrees C. It is proposed that some unknown H-related donor-like defects still exist in the film after annealing. (C) 2013 Elsevier B.V. All rights reserved.