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论文类型：期刊论文
发表时间：2013-07-08
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI、Scopus
卷号：103
期号：2
ISSN号：0003-6951
摘要：Vertically aligned ZnO nanowall networks were grown on p-GaN/sapphire substrates by metal-organic chemical vapor deposition, and further heterojunction light-emitting diodes based on n-ZnO/p-GaN were fabricated. Highly efficient ultraviolet-blue emission was observed from the diode under forward bias, and it operated continuously for 8.5 h with decay of only 8.08% under a continuous current of 12 mA. The diode exhibited low emission onset and good stability. In addition, temperature-dependent electroluminescence and current-voltage behaviors of the diode were investigated to examine the thermal effects on light output power, spectral line shift, and temperature sensitivity of the resulting voltage. (C) 2013 AIP Publishing LLC.