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论文类型：期刊论文
发表时间：2013-04-22
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI、Scopus
卷号：102
期号：16
ISSN号：0003-6951
摘要：Vertical conducting light-emitting diodes based on p-ZnO/n-GaN structure were fabricated on conductive n-SiC(6H) substrates. The p-ZnO:As films were prepared by arsenic out-diffusion from a sandwiched GaAs interlayer on a GaN/SiC template, and the As-Zn-2V(Zn) complex was considered to be the most probable defect contributing to the p-type conductivity of the ZnO:As films. Under forward bias, an intense ultraviolet emission at similar to 384 nm from the ZnO side was observed. The electroluminescence performance of the diode was remarkable in terms of its low emission onset and high-purity ultraviolet emission. Additionally, the unencapsulated diode showed good stability over a duration of 2 months. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802806]