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论文类型：会议论文
发表时间：2013-05-25
收录刊物：EI、Scopus
摘要：Annealing treatment was an effective and convenient strategy to change films optical properties and improve films crystal properties. In this study, four different post thermal annealing temperatures (700, 800, 900, and 1000 oC) were applied to Ga2O3:Cu films, prepared using electron beam method. The structure, optical properties, and chemical states of dopant Cu of the Ga2O3:Cu film were investigated experimentally. The X-ray diffractometer (XRD) patterns of Ga2O3:Cu films exhibited that the intensity of the diffraction peaks eaks of (201) plane family of    -Ga2O3 were gradually increasing after annealing treatment. XRD results revealed that the grain size of the films increased with annealing temperature. The optical band gap of the Ga2O3:Cu film was broadened too. The X-ray photoelectron spectroscopy (XPS) result indicated that the Cu ions was doped into the Ga2O3:Cu films with univalent and bivalent chemical states. ? OSA 2013.