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论文类型：期刊论文
发表时间：2012-12-01
发表刊物：APPLIED PHYSICS B-LASERS AND OPTICS
收录刊物：Scopus、SCIE、EI
卷号：109
期号：4
页面范围：605-609
ISSN号：0946-2171
摘要：N-ZnO/Ga2O3/p-GaN heterojunction light-emitting diode (LED) was fabricated by metal-organic chemical vapor deposition. Compared with the n-ZnO/p-GaN structure, the deep level visible emission at 525 nm was completely suppressed while UV emission at similar to 392 nm was significantly improved in ZnO/Ga2O3/p-GaN structure. The role of Ga2O3 in n-ZnO/Ga2O3/p-GaN heterojunction LED was discussed in detail.