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发布时间：2019-03-09
论文类型：期刊论文
发表时间：2012-01-01
发表刊物：ELECTROCHEMICAL AND SOLID STATE LETTERS
收录刊物：Scopus、EI、SCIE
卷号：15
期号：5
页面范围：H164-H166
ISSN号：1099-0062
摘要：A novel ZnO homojunction light emitting diode (LED) with n-ZnO-nanorods/p-ZnO:As-film structure is fabricated on the GaAs substrate. Desirable rectifying behavior and distinct ultraviolet electroluminescence emission are observed from this novel structured ZnO homojunction LED. The well-aligned n-type one-dimensional ZnO nanorods are synthesized by a simple wet chemical bath deposition. To fabricate the ZnO nanorods on the GaAs substrate, a key two-dimensional intermediate ZnO:As film layer is employed. The ZnO:As film is grown by metal organic chemical vapor deposition followed by an annealing treatment. Moreover, the intermediate ZnO:As film is also used as the p-type layer of the ZnO LED. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.020205esl] All rights reserved.