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论文类型：期刊论文
发表时间：2012-02-01
发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：EI、SCIE
卷号：23
期号：2
页面范围：542-545
ISSN号：0957-4522
摘要：Ga2O3 thin films were deposited on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition. The influence of annealing in N-2 atmosphere at the temperature in the range of 800-1,000 A degrees C was investigated by X-ray diffraction and optical transmittance spectra. With an increase of annealing temperature from 800 to 950 A degrees C, the transformation from the initial amorphous film to polycrystalline beta-Ga2O3 thin film was observed, and the transmittance was also improved remarkably. The optical band gap energy of the sample annealed at 950 A degrees C was evaluated as similar to 5 eV. Whereas, after an annealing at 1,000 A degrees C, the crystal quality became worse and the transmittance degraded. The mechanism of annealing in N-2 atmosphere was discussed in view of phase transition.