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论文类型：期刊论文
发表时间：2012-03-05
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI、Scopus
卷号：100
期号：10
ISSN号：0003-6951
摘要：Undoped InN thin film was grown on p-GaN/Al2O3 (0001) template by molecular beam epitaxy. Near-infrared (NIR) electroluminescence (EL) that overlapped the optical communication wavelength range was realized using the n-InN/p-GaN heterojunction structure. The light emitting diode showed typical rectification characteristics with a turn-on voltage of around 0.8 V. A dominant narrow NIR emission peak was achieved from the InN side under applied forward bias. By comparing with the photoluminescence spectrum, the EL emission peak at 1573 nm was attributed to the band-edge emission of the InN film. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693150]