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发布时间：2019-03-09
论文类型：期刊论文
发表时间：2012-01-01
发表刊物：OPTICAL MATERIALS EXPRESS
收录刊物：EI、SCIE、Scopus
卷号：2
期号：1
页面范围：38-44
ISSN号：2159-3930
摘要：The authors report on the fabrication of p-Mg(0.1)Zn(0.9)O/n-GaN light emitting diodes (LEDs). Under forward bias, dominant ultraviolet (UV) electroluminescence is detected within 360-380 nm caused by near band edge (NBE) radiative recombination from both n-GaN and p-Mg(0.1)Zn(0.9)O. It is worth noting that the intensity ratio of UV-NBE/visible-DLE reaches up to 50, which indicates the potential applications of this structure in the short wavelength LEDs. (C) 2011 Optical Society of America