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论文类型：期刊论文
发表时间：2011-04-01
发表刊物：JOURNAL OF LUMINESCENCE
收录刊物：SCIE、EI
卷号：131
期号：4
页面范围：825-828
ISSN号：0022-2313
关键字：p-ZnO:N/n-GaN:Si hererojunction; LED; UV electroluminescence; MOCVD
摘要：A p-ZnO:N/n-GaN:Si structure heterojunction light-emitting diode (LED) is fabricated on c-plane sapphire by full metal organic chemical vapor deposition (MOCVD) technique. The p-type layer with hole concentration of 8.94 x 10(16) cm(-3) is composed of nitrogen-doped ZnO using NH3 as the doping source with subsequent annealing in N2O plasma ambient. Silicon-doped GaN film with electron concentration of 1.15 x 10(18) cm(-3) is used as the n-type layer. Desirable rectifying behavior is observed from the current-voltage (I-V) curve of the device. The forward turn on voltage is about 4 V and the reverse breakdown voltage is more than 7 V. A distinct ultraviolet (UV) electroluminescence (EL) with a dominant emission peak centered at 390 nm is detected at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence (PL) spectra. (C) 2010 Elsevier B.V. All rights reserved.