Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping
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发布时间：2019-03-10
论文类型：期刊论文
发表时间：2008-12-01
发表刊物：CHINESE PHYSICS LETTERS
收录刊物：Scopus、ISTIC、SCIE
卷号：25
期号：12
页面范围：4345-4347
ISSN号：0256-307X
摘要：ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395 nm and 490 nm are detected from this device at forward current higher than 20 mA at room temperature.
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