扫描手机二维码

欢迎您的访问
您是第 位访客

开通时间:..

最后更新时间:..

  • 梁红伟 ( 教授 )

    的个人主页 http://faculty.dlut.edu.cn/kid/zh_CN/index.htm

  •   教授   博士生导师   硕士生导师
  • 主要任职:集成电路学院院长
论文成果 当前位置: 中文主页 >> 科学研究 >> 论文成果
Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition

点击次数:
论文类型:期刊论文
发表时间:2007-06-01
发表刊物:SOLID STATE COMMUNICATIONS
收录刊物:SCIE、EI、Scopus
卷号:142
期号:11
页面范围:655-658
ISSN号:0038-1098
关键字:ZnO homojunction; light emitting device; As doping; pulsed laser deposition
摘要:A ZnO homojunction light emitting device was grown on n+ GaAs substrate by pulsed laser deposition. As-doped ZnO film by diffusion of As from the substrate was used for the p-type side and Al-doped ZnO film for the n-type side of the device. A distinct electroluminescence emission consisting of a dominant emission peak at similar to 2.5 eV and a weak shoulder centered at similar to 3.0 eV was observed at room temperature. The I-V characteristic of the ZnO homojunction showed a good rectifying behavior with a turn-on voltage of similar to 4.5 V and a reverse breakdown voltage of similar to 9 V. (c) 2007 Elsevier Ltd. All rights reserved.

 

辽ICP备05001357号 地址:中国·辽宁省大连市甘井子区凌工路2号 邮编:116024
版权所有:大连理工大学