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论文类型：期刊论文
发表时间：2007-06-01
发表刊物：SOLID STATE COMMUNICATIONS
收录刊物：SCIE、EI、Scopus
卷号：142
期号：11
页面范围：655-658
ISSN号：0038-1098
关键字：ZnO homojunction; light emitting device; As doping; pulsed laser deposition
摘要：A ZnO homojunction light emitting device was grown on n+ GaAs substrate by pulsed laser deposition. As-doped ZnO film by diffusion of As from the substrate was used for the p-type side and Al-doped ZnO film for the n-type side of the device. A distinct electroluminescence emission consisting of a dominant emission peak at similar to 2.5 eV and a weak shoulder centered at similar to 3.0 eV was observed at room temperature. The I-V characteristic of the ZnO homojunction showed a good rectifying behavior with a turn-on voltage of similar to 4.5 V and a reverse breakdown voltage of similar to 9 V. (c) 2007 Elsevier Ltd. All rights reserved.