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论文类型：期刊论文
发表时间：2007-04-12
发表刊物：JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
收录刊物：SCIE
卷号：184
期号：1-3
页面范围：451-454
ISSN号：0924-0136
关键字：electroluminescence; ultrasonic spray pyrolysis; zinc oxide films; p-n junction; light emitting devices
摘要：To realize practical application of short-wavelength optoelectronic devices (such as light emitting diodes, LEDs, and LDs) based on ZnO materials, electroluminescence (EL) from ZnO based junction device is pivotal. In this article, ZnO based devices with different structures were grown on single-crystal GaAs(100) substrate by ultrasonic spray pyrolysis. The ZnO homojunction was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Moreover, heterojunction device with n-ZnMgO/ZnO/p-ZnMgO structure was also grown on single-crystal GaAs(100) substrate by the same method. Ohmic contact layer on n-type ZnO layer and GaAs substrate were formed by Zn/Au and Au/Ge/Ni electrodes, respectively. Distinct light emission was observed under forward current injection at room temperature. The origin of electroluminescence emission was supposed to be attributed to a radiative recombination through deep-level defects in the structure. (c) 2006 Elsevier B.V. All rights reserved.