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论文类型：期刊论文
发表时间：2006-07-31
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI、Scopus
卷号：89
期号：5
ISSN号：0003-6951
摘要：ZnO homojunction light-emitting diode was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis. This diode was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact on n-type ZnO layer and GaAs substrate was formed by Zn/Au and Au/Ge/Ni alloyed metal electrodes, respectively. An electroluminescence emission associated with defects was observed from the ZnO homojunction under forward current injection at room temperature. The I-V characteristics of the homojunction showed a threshold voltage of similar to 4 V under forward bias. (c) 2006 American Institute of Physics.