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论文类型：期刊论文
发表时间：2006-01-02
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI
卷号：88
期号：1
ISSN号：0003-6951
摘要：FeSe thin films were grown on GaAs (001) substrates using low-pressure metalorganic chemical vapor deposition. X-ray diffraction analysis showed that FeSe thin films were in tetragonal structure with (002) orientation. It was found that the FeSe thin films were ferromagnetic above room temperature, revealing a maximum saturation magnetization about 590 emu/cc along the in-plane magnetic easy axis. The Hall measurement indicated that the as grown FeSe thin films was of p-type conduction with hole concentration of as high as 10(20)similar to 10(21) cm(-3). The magnetic circular dichroism spectrum was employed to study the electronic structure. (c) 2006 American Institute of Physics.