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梁红伟
( 教授 )
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个人主页 http://faculty.dlut.edu.cn/kid/zh_CN/index.htm
教授 博士生导师 硕士生导师
主要任职：
集成电路学院院长
性别：
男
毕业院校：
长春光机与物理研究所
学位：
博士
所在单位：
集成电路学院
学科：
微电子学与固体电子学. 凝聚态物理
办公地点：
信息楼207B室
电子邮箱：
08a33fd2205a2b3aeeb4ba335f9eb8ef74aa34efd7cfb115228837f338eef4b35d152ec4d5a6a8833028154335d121bede2c7c90aabd32996fde752a6174e3b6c07dd51f3148c70020667bc6327a32edfcd1d5d1bcdc79c7c5627f4595979cf5ad37e5c9a5bf1f32ea6548a13ca8e27d2651927e687ce6048587dfecbb2b19c4
论文成果
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论文成果
[21]
Chen, Yuanpeng.Liang, HW (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China..Du, Guotong,Abbas, Qasim,Liu, Yang,Xia, Xiaochuan,Liang, Hongwei.Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition[J],CRYSTAL GROWTH & DESIGN,2018,18(2):1147-1154
[22]
冯秋菊.Feng, Q.-J.; School of Physics and Electronic Technology, Liaoning Normal UniversityChina; email: qjfeng@dlut.edu.cn.李彤彤,潘德柱,梁红伟,石笑驰,邢研,李芳.单根锑掺杂ZnO微米线热电发电机的制备及热电性能[J],无机化学学报,2018,34(02):331-336
[23]
冯秋菊.梁红伟,Li fang,Li tongtong,Li yunzheng,Shi bo,Li mengke.Growth and characterization of grid-like beta-Ga2O3 nanowires by electric field assisted chemical vapor deposition method[J],ACTA PHYSICA SINICA,2018,67(21):218101-
[24]
Yang, Chao.Liang, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Shen, Rensheng,Luo, Yingmin,Tao, Pengcheng,Chen, Yuanpeng,Zhang, HeQiu,Zhang, Zhenzhong,Xia, Xiaochuan,Du, Guotong,Liang, Hongwei.Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3[J],RSC ADVANCES,2018,8(12):6341-6345
[25]
Zheng, Xiantong.Liang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China.; Wang, XQ (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China..Wang, Yixin,Chen, Ling,Chen, Zhaoying,Wang, Tao,Sheng, Bowen,Liang, Hongwei,Wang, Ping,Sun, Xiaoxiao,Li, Mo,Zhang, Jian,Wang, Xinqiang,Wang, Ding,Rong, Xin.Effect of indium droplets on growth of InGaN film by molecular beam epitaxy[J],SUPERLATTICES AND MICROSTRUCTURES,2018,113:650-656
[26]
Chen, Yuanpeng.Liang, HW (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China.; Liang, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Shi, Jianjun,Abbas, Qasim,Du, Guotong,Liang, Hongwei,Xia, Xiaochuan,Zhang, Heqiu.Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(19):14341-14347
[27]
Liu, Jianxun.Liang, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Shen, Rensheng,Luo, Yingmin,Abbas, Qasim,Huang, Huolin,Zheng, Xiantong,Liu, Yang,Xia, Xiaochuan,Du, Guotong,Liang, Hongwei.Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(33):18095-18101
[28]
Zhu, Zhi-Fu.Zou, JJ (reprint author), East China Inst Technol, Engn Res Ctr Nucl Technol Applicat, Minist Educ, Nanchang 330013, Jiangxi, Peoples R China.; Zhang, HQ (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Du, Guo-Tong,Zou, Ji-Jun,Tang, Bin,Zhang, He-Qiu,Liang, Hong-Wei,Peng, Xin-Cun.Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements[J],CHINESE PHYSICS LETTERS,2017,34(9)
[29]
Liu, Jianxun.Liang, HW (reprint author), Dalian Univ Technol, Sch Microelect, Sch Phys, Dalian 116024, Peoples R China..Zhang, Yuantao,Shen, Rensheng,Luo, Yingmin,Liu, Yang,Liu, Jun,Abbas, Qasim,Liang, Hongwei,Xia, Xiaochuan,Du, Guotong.Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition[J],CRYSTAL GROWTH & DESIGN,2017,17(6):3411-3418
[30]
Liu, Jianxun.Liang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Sandhu, Qasim Abbas,Shen, Rensheng,Luo, Yingmin,Xia, Xiaochuan,Huang, Huolin,Tao, Pengcheng,Du, Guotong,Liang, Hongwei,Liu, Yang.Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70
共 194 条 3/20
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