大连理工大学主页平台管理系统梁红伟--中文主页--论文成果

扫描手机二维码

欢迎您的访问
您是第位访客

开通时间：..

最后更新时间：..

大连理工大学| 登录| English | 手机版

同专业博导

同专业硕导

个人学术主页

梁红伟 ( 教授 ) 赞
的个人主页 http://faculty.dlut.edu.cn/kid/zh_CN/index.htm
教授博士生导师硕士生导师
主要任职：集成电路学院院长

论文成果当前位置: 中文主页 >> 科学研究 >> 论文成果

[31]冯秋菊, 潘德柱, 邢研, 石笑驰, 杨毓琪, 李芳, 李彤彤, 郭慧颖, 梁红伟, Feng, QJ (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..图形化蓝宝石衬底上有序微米半球形SnO2的生长、结构和光学特性研究[J],物理学报,2017,66(3):316-322
[32]Xia, Xiaochuan, Liang, Hongwei, Geng, Xinlei, Chen, Yuanpeng, Yang, Chao, Liu, Yang, Shen, Rensheng, Xu, Mengxiang, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(3):2598-2601
[33]Cheng, Yi, Du, Guotong, Liang, Hongwei, Yin, Hongming, Che, Li, Jing, Bo, Chen, Jixiang, Yang, Kun, Y, Yang, K (reprint author), Dalian Maritime Univ, Dept Phys, Dalian 116026, Peoples R China..Influence of substrate temperature on the optical properties of Sb-doped ZnO films prepared by ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(3):2602-2606
[34]冯秋菊, 潘德柱, 邢研, 石笑驰, 杨毓琪, 李芳, 李彤彤, 郭慧颖, 梁红伟.图形化蓝宝石衬底上有序微米半球形SnO_2的生长、结构和光学特性研究[J],物理学报,2017,66(3):038101
[35]Feng, Qiuju, Liu, Jiayuan, Yang, Yuqi, Pan, Dezhu, Xing, Yan, Shi, Xiaochi, Xia, Xiaochuan, Liang, Hongwei, QJ (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..Catalytic growth and characterization of single crystalline Zn doped p-type beta-Ga2O3 nanowire...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2016,687:964-968
[36]Huang, Zhen, Zhang, Yuantao, Deng, Gaoqiang, Li, Baozhu, Cui, Shuang, Liang, Hongwei, Chang, Yuchun, Song, Junfeng, Baolin, Du, Guotong, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China..Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlay...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(10):10003-10009
[37]Xia, Xiaochuan, Chen, Yuanpeng, Feng, Qiuju, Liang, Hongwei, Tao, Pengcheng, Xu, Mengxiang, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Hexagonal phase-pure wide band gap epsilon-Ga2O3 films grown on 6H-SiC substrates by metal orga...[J],APPLIED PHYSICS LETTERS,2016,108(20)
[38]Zheng, Xiantong, Xu, Fujun, Qin, Zhixin, Shen, Bo, Wang, Xinqiang, Guo, Lei, Liang, Hongwei, Ping, Shibo, Tao, Rong, Xin, Sheng, Bowen, Yang, Xueling, XQ (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China., Wang, Collaborat Innovat Ctr Quantum Matter, Beijing.Photoconductivity in InxGa1-xN epilayers[J],OPTICAL MATERIALS EXPRESS,2016,6(3):815-822
[39]Liang, Hongwei, Zhang, Yuantao, Luo, Yingmin, Shen, Rensheng, Liu, Yang, Kexiong, Chen, Yuanpeng, Xia, Xiaochuan, Tao, Pengcheng, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(3)
[40]Huang, Zhen, Song, Junfeng, Zhang, Yuantao, Zhao, Baijun, Yang, Fan, Jiang, Junyan, Li, Baozhu, Liang, Hongwei, Chang, Yuchun, Deng, Gaoqiang, YT, Chang, YC (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China..Effects of AlN buffer on the physical properties of GaN films grown on 6H-SiC substrates[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(2):1738-1744
[41]Tao, Pengcheng, Xia, Xiaochuan, Chen, Yuanpeng, Yang, Chao, Liu, Jianxun, Zhu, Zhifu, Yang, Shen, Rensheng, Luo, Yingmin, Zhang, Yuantao, Du, Guotong, Liang, Hongwei, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,41:291-296
[42]Liu, Jianxun, Xia, Xiaochuan, Huang, Huolin, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Li, Binghui, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J],RSC ADVANCES,2016,6(65):60068-60073
[43]蒋建华, 黄慧诗, 梁红伟, 王东盛, 柳阳, 夏晓川, 申人升.不同电子阻挡层的紫光LED特性研究[J],光电子技术,2015,35(4):253-257,262
[44]Zhao, Wan-Ru, Weng, Guo-En, Wang, Jian-Yu, Zhang, Jiang-Yong, Liang, Hong-Wei, Sekiguchi, Takashi, Bao-Ping, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells[J],NANOSCALE RESEARCH LETTERS,2015,10(1):459
[45]冯秋菊, 刘洋, 潘德柱, 杨毓琪, 刘佳媛, 梅艺赢, 梁红伟, Feng, QJ (reprint author), Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China..不同Sb含量p-SnO_2薄膜的制备和特性[J],物理学报,2015,64(24):403-407

共194条 3/13

首页上页下页尾页页

辽ICP备05001357号地址：中国·辽宁省大连市甘井子区凌工路2号邮编：116024
版权所有：大连理工大学