大连理工大学主页平台管理系统齐莉萍--中文主页-- Effect of oxygen partial pressure on crystal quality and electrical properties of RF sputtered PZT thin films under the fixed Ar flow and sputtering pressure

齐莉萍 ( 副教授 ) 赞
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副教授硕士生导师

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Effect of oxygen partial pressure on crystal quality and electrical properties of RF sputtered PZT thin films under the fixed Ar flow and sputtering pressure

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发表时间：2020-01-01
发表刊物：真空
卷号：172
ISSN号：0042-207X

上一条： Double-layer resist method to improve descum result when removing negative photoresist

下一条： Enhanced dielectric and piezoelectric properties of RF sputtered Pb(Zr-0.60,Ti-0.40)O-3 thin films deposited on sol-gel derived Pb1+x(Zr-0.40,Ti-0.60)O-3 seed layer with various lead contents