孙立成

个人信息Personal Information

教授

博士生导师

硕士生导师

主要任职:无

其他任职:精细化工国家重点实验室副主任、大连理工大学-瑞典皇家工学院分子器件联合研究中心主任

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:化工学院

学科:应用化学. 精细化工

办公地点:大连理工大学西部校区化工实验楼E-223

联系方式:0411-84986493

电子邮箱:sunlc@dlut.edu.cn

扫描关注

论文成果

当前位置: 中文主页 >> 科学研究 >> 论文成果

Highly transparent nickel and iron sulfide on nitrogen-doped carbon films as counter electrodes for bifacial quantum dot sensitized solar cells

点击次数:

论文类型:期刊论文

发表时间:2019-11-15

发表刊物:SOLAR ENERGY

收录刊物:EI、SCIE

卷号:193

页面范围:766-773

ISSN号:0038-092X

关键字:Metal sulfide; Nitrogen doped C film; Quantum dot-sensitized solar cells; Counter electrode

摘要:Semiconductors are widely used as counter electrodes in quantum dot-sensitized solar cells. However, many counter electrode materials have poor conductivity and require tedious post-treatment procedures. Here, our groups develop a highly transparent MS2@N-doped C film materials (M = Ni, Fe) derived from layer-by-layer self-assembly of a M-TCPP film as a counter electrode in bifacial CdS/CdSe quantum dot-sensitized solar cells. Devices based on the MS2@N-doped C films exhibited higher respective front- and reverse-side power conversion efficiencies (i.e., 4.57% and 3.98% for the NiS2@N-doped C film and 3.18% and 2.63% for the FeS2@N-doped C film) than those of Pt-based devices (2.39% and 1.74%). We attribute the outstanding catalytic activity and excellent stability of the MS2@N-doped C film materials to the homogeneous sulfides within the transparent nitrogen-doped C film, as confirmed by electrochemical analyses, including cycle voltammetry, impedance spectroscopy and Tafel-polarization measurements.