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发表时间：2017-01-01

发表刊物：工程热物理学报

卷号：38

期号：7

页面范围：1415-1421

ISSN号：0253-231X

摘要：There are very limited experimental researches on the thermal
   conductivity of semiconductors like SiC at low temperatures. Thus, this
   cannot meet the needs of theoretical model optimization due to the
   scarce data. The existing experimental measurements are mainly based on
   the steady state method,which is a contact method with large
   experimental errors and prohibitive costs. In this paper, via the
   organic integration of the time-domain thermoreflectance and cryogenic
   system, we measured the thermal conductivity of a single crystal silicon
   carbide sample under low temperatures ranging from 4 K to 300 K. The
   result shows that the thermal conductivity of SiC possesses a peak value
   at about 100 K. When the temperature is lower than 100 K,the thermal
   conductivity demonstrates a positive correlation with temperature.
   However, when the temperature is higher than 100 K, there is a negative
   correlation between the thermal conductivity and the temperature. The
   deviation of the experimental peak value positions of the thermal
   conductivities from the theoretically predicted value could be resulted
   by factors such as electron-doping and different distributions of
   defects.

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