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论文类型：期刊论文

发表时间：1993-05-01

发表刊物：JOURNAL OF APPLIED PHYSICS

收录刊物：SCIE、Scopus

卷号：73

期号：9

页面范围：4171-4175

ISSN号：0021-8979

摘要：Plasma source ion implantation is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses are applied to it to extract ions from the plasma and implant them into the target. A Monte Carlo simulation model is developed to study the energy and angle distributions of ions at the planar target for higher pressures of the neutral gas. Cross sections of the charge exchange and momentum transfer that depend on the ion energy are taken into account precisely. The energy and angle distributions of N2+ at the target during the sheath edge evolution for the different pressures are determined.