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发布时间：2026-10-13
论文类型：期刊论文
论文编号：605351
发表时间：2026-01-01
发表刊物：IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN号：0018-9383
关键字：ALGAN/GAN HEMT; BIAS; INSTABILITY; PERFORMANCE; V-TH STABILITY
上一条：Recessed-Gate Enhancement-Mode GaN HEMTs: Pre-Stress-Free High-Voltage Pulse Testing and Its Effects on Dynamic On-Resistance
下一条：A Junction Temperature Balancing Control Method for parallel GaN Power Devices Based on Active Gate Voltage Regulation
