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Piezoresistive failure behaviors and mechanisms of the ITO thin films at high temperatures

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发表时间：2024-05-29

发表刊物：VACUUM

卷号：215

ISSN号：0042-207X

关键字：INDIUM; OXIDATION; OXIDES; OXYGEN VACANCIES; RESISTANCE; STABILITY; STATE; SURFACE; TIB2

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下一条：Effect of nitrogen partial pressure on the piezoresistivity of magnetron sputtered ITO thin films at high temperatures