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发布时间：2024-10-17

发表时间：2022-10-04

发表刊物：功能材料

期号：11

页面范围：1850-1852,1856

ISSN号：1001-9731

摘要：SiO_2 multilayer composite insulating film for cutting measurement temperature sensor was prepared by means of advanced twinned microwave ECR plasma source enhanced radio frequency (RF) reaction non-balance magnetron sputtering technique. Preparation technology for the SiO_2 film was studied. Micro-morphology,depth and compositions of SiO_2 film was investigated by SEM, AFM, step profiler and XPS. The results showed that SiO_2 thin-film posess small depth and excellent insulating property (insulation resistance reached 9. 5Xl0~(12)Ω). Binding force between the SiO_2 thin-film and metal substrate was 15. 8 and 16. 7N. It may meet the demands of preparing the cutter measurement temperature sensor.

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