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论文类型：期刊论文

发表时间：2022-06-30

发表刊物：物理学报

卷号：54

期号：7

页面范围：3241-3246

ISSN号：1000-3290

摘要：Diamond-like carbon(DLC) films were prepared on silicon (100) wafer by microwave electron cyclotron resonance(MW-ECR) plasma source ion implantation( PSII). The results showed that the films had typical properties of DLC. The films was dense and homogeneous, and the roughness and friction coefficient was low. The connection between the properties of the films and the flow ratio of hydrogen was closely. With the increase of the flow ratio of hydrogen to methane, the deposition rate and the roughness of the films decreased. The sp(3) bond obtained was more likely diamond like, which had low surface energy, consequently making the friction coefficient of the films decrease rapidly.

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