点击次数：

论文类型：期刊论文

发表时间：2022-06-29

发表刊物：物理学报

卷号：57

期号：8

页面范围：5170-5175

ISSN号：1000-3290

摘要：Hydrogen-free SiNx films were deposited at Substrate temperature ranging from room temperature to 700 degrees C by microwave electron cyclotron re3onance plasma enhanced unbalanced magnetron sputtering system. We have studied the influence of substrate temperature on the structural characteristics of deposited films including growth rate, microstructure, grain size, and hardness by using transmission electron microscopy, Fourier-transform infrared spectroscopy, and nano-indentation. The results indicate that the film3 deposited at room temperature are amorphous, and alpha-Si3N4 grains with random epitaxial sizes appear when substrate temperature is higher than 300 degrees C. The alpha-Si3N4 grain size increases with substrate temperature up to 620 degrees C, and then decreases at 700 degrees C. At 700 degrees C, the grains have uniform epitaxial sizes, and value of the film hardness reaches the maximum (36.7 GPa).

备注：新增回溯数据