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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2010-09-01

发表刊物：JOURNAL OF PHYSICS-CONDENSED MATTER

收录刊物：EI、SCIE

卷号：22

期号：34

ISSN号：0953-8984

摘要：Ferromagnetic ordering at room temperature (RTFM) in MgO thin films deposited by RF magnetron sputtering under various atmospheric conditions and temperatures is reported. A saturation magnetization (MS) value as high as 1.58 emu g(-1) is (0.046 mu B/unit cell) observed for a 170 nm film deposited at RT under an oxygen pressure of 1.3 x 10(-4) mbar. In contrast, films deposited at elevated temperature (under an identical oxygen pressure), or at higher oxygen pressures, as well as under a nitrogen atmosphere at RT show significantly suppressed magnetization. The ferromagnetic order in the MgO matrix is believed to be defect induced.