徐军

305

  • 副教授     博士生导师   硕士生导师
  • 性别:男
  • 毕业院校:大连理工大学
  • 学位:博士
  • 所在单位:物理学院
  • 学科:等离子体物理. 材料表面工程
  • 办公地点:大连理工大学物理学院三束实验室2号楼202房间
  • 联系方式:大连理工大学物理学院三束实验室
  • 电子邮箱:xujun@dlut.edu.cn

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开通时间:2016.9.12

最后更新时间:2016.9.12

Influence of N-2 flow rate on the mechanical properties of SiNx films deposited by microwave electron cyclotron resonance magnetron sputtering

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论文类型:期刊论文

发表时间:2010-02-01

发表刊物:THIN SOLID FILMS

收录刊物:SCIE、EI

卷号:518

期号:8

页面范围:2077-2081

ISSN号:0040-6090

关键字:Silicon nitride; Plasma processing and deposition; Fourier-transform infrared spectroscopy; Mechanical properties

摘要:Hydrogen-free amorphous silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance plasma-enhanced unbalance magnetron sputtering. Varying the N-2 flow rate, SiNx films with different properties were obtained. Characterization by Fourier-transform infrared spectrometry revealed the presence of Si-N and Si-O bonds in the films. Growth rates from 1.0 to 4.8 nm/min were determined by surface profiler. Optical emission spectroscopy showed the N element in plasma mainly existed as N+ species and N-2(+) species with 2 and 20 sccm N-2 flow rate, respectively. With these results, the chemical composition and the mechanical properties of SiNx films strongly depended on the state of N element in plasma, which in turn was controlled by N-2 flow rate. Finally, the film deposited with 2 sccm N-2 flow rate showed no visible marks after immersed in etchant [6.7% Ce(NH4)(2)(NO3)(6) and 93.3% H2O by weight] for 22 h and wear test for 20 min, respectively. (C) 2009 Elsevier B.V. All rights reserved.